The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Sep. 22, 2008
Philippe Coronel, Barraux, FR;
Benjamin Dumont, Grenoble, FR;
Arnaud Pouydebasque, Gieres, FR;
Markus Müller, Brussels, BE;
Philippe Coronel, Barraux, FR;
Benjamin Dumont, Grenoble, FR;
Arnaud Pouydebasque, Gieres, FR;
Markus Müller, Brussels, BE;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
NXP B.V., Eindhoven, NL;
Abstract
A process for forming a wire portion in an integrated electronic circuit includes epitaxially growing the wire portion on a side surface of a seed layer portion (). Cross-sectional dimensions of the wire portion correspond to a thickness of the seed layer portion and to a duration of the growing step. The seed layer portion is then selectively removed while the wire portion is retained fixedly on the circuit. Afterwards, heating of the circuit can cause the wire portion becoming rounded in cross-section. The wire portion obtained may be about 10 nanometers in diameter. It may be used for forming a channel of a MOS transistor devoid of short channel effect.