The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Mar. 22, 2007
Craig Henry Huffman, Krugerville, TX (US);
Weize Xiong, Austin, TX (US);
Cloves Rinn Cleavelin, Dallas, TX (US);
Craig Henry Huffman, Krugerville, TX (US);
Weize Xiong, Austin, TX (US);
Cloves Rinn Cleavelin, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.