The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7960228 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 14, 2011

Filed:

Nov. 14, 2007
Applicants:

Wensheng Wang, Kawasaki, JP;

Yoshimasa Horii, Kawasaki, JP;

Inventors:

Wensheng Wang, Kawasaki, JP;

Yoshimasa Horii, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.


Find Patent Forward Citations

Wang, Wensheng. (2011). Methods of making a ferroelectric memory device having improved interfacial characteristics (U.S. Patent No. 7960228). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7960228

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