The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Apr. 07, 2010
DO Gi Lim, Cheonan-Si, KR;
Jong Hwan Lee, Anyang-Si, KR;
Hong Woo Lee, Cheonan-Si, KR;
Yong JO Kim, Seoul, KR;
Yong Woo Lee, Seoul, KR;
Do Gi Lim, Cheonan-Si, KR;
Jong Hwan Lee, Anyang-Si, KR;
Hong Woo Lee, Cheonan-Si, KR;
Yong Jo Kim, Seoul, KR;
Yong Woo Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.