The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2011

Filed:

Mar. 26, 2008
Applicants:

Satoshi Sugahara, Kanagawa, JP;

Yota Takamura, Kanagawa, JP;

Inventors:

Satoshi Sugahara, Kanagawa, JP;

Yota Takamura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosure provides a method of forming a ferromagnetic material, including: forming a magnetic element layer on a semiconductor layer formed on an inhibition layer; and forming a ferromagnetic layer of a Heusler alloy layer on the inhibition layer by heat treatment to induce the semiconductor layer and the magnetic element layer to react with each other, and a transistor, and a method of manufacturing the same. The inhibition layer for inhibiting a reaction of the semiconductor layer and the magnetic element layer restricts a semiconductor to be supplied for a reaction of the semiconductor and the magnetic element. Therefore, it is possible to form a ferromagnetic material having a high composition ratio of a magnetic element.


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Sugahara, Satoshi. (2011). Method of forming ferromagnetic material, transistor and method of manufacturing the same (U.S. Patent No. 7960186). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7960186

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