The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7957212 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 07, 2011

Filed:

Mar. 30, 2006
Applicants:

Hee-bok Kang, Kyoungki-do, KR;

Jin-hong Ahn, Kyoungki-do, KR;

Inventors:

Hee-Bok Kang, Kyoungki-do, KR;

Jin-Hong Ahn, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A unit memory cell for use in a pseudo static random access memory (SRAM) includes a cell capacitor; a normal accessing transistor whose gate, drain and source are respectively connected to a normal accessing word line, a normal accessing bit line and a storage node of the cell capacitor; and a refresh accessing transistor whose gate, drain and source are respectively connected to a refresh accessing word line, a refresh accessing bit line and the storage node of the cell capacitor.


Find Patent Forward Citations

Kang, Hee-Bok. (2011). Pseudo sram (U.S. Patent No. 7957212). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7957212

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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