The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Sep. 11, 2007
Naoki Koyama, Tokyo, JP;
Koichi Nishioka, Kanagawa, JP;
Kouji Okazaki, Kanagawa, JP;
Shuichi Kojima, Kanagawa, JP;
Azusa Hori, Kanagawa, JP;
Satoshi Shigematsu, Kanagawa, JP;
Yukimasa Okada, Kanagawa, JP;
Naoki Koyama, Tokyo, JP;
Koichi Nishioka, Kanagawa, JP;
Kouji Okazaki, Kanagawa, JP;
Shuichi Kojima, Kanagawa, JP;
Azusa Hori, Kanagawa, JP;
Satoshi Shigematsu, Kanagawa, JP;
Yukimasa Okada, Kanagawa, JP;
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A tunnel magnetoresistance effect magnetic head having between magnetic shield layers, an antiferromagnetic layer, a pinned layer which has the direction of magnetization pinned by exchange coupling with the antiferromagnetic layer, an insulating layer, and a free layer whose direction of magnetization rotates relatively to external magnetic fields, wherein the antiferromagnetic layer is of an antiferromagnetic substance composed mainly of IrMn, the pinned layer is made up of a first pinned layer of CoFe alloy in contact with the antiferromagnetic layer and a second pinned layer of CoFeB alloy which is antiferromagnetically coupled with the first pinned layer, and the first and second pinned layers have the amount of magnetization such that the difference M1−M2 is in the range of 0<M2−M1<0.5 (nm·T) and also have the magnetostriction constants such that the difference |λ1−λ2| is no larger than 5.0×10.