The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2011

Filed:

Jan. 16, 2009
Applicants:

Je-hun Lee, Seoul, KR;

Kap-soo Yoon, Seoul, KR;

Kyung-seok Son, Seoul, KR;

Do-hyun Kim, Seoul, KR;

Chang-oh Jeong, Suwon-si, KR;

Inventors:

Je-Hun Lee, Seoul, KR;

Kap-Soo Yoon, Seoul, KR;

Kyung-Seok Son, Seoul, KR;

Do-Hyun Kim, Seoul, KR;

Chang-Oh Jeong, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); G02F 1/13 (2006.01); H01L 29/786 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.


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