The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jan. 04, 2008
Masataka Ohira, Soraku-gun, JP;
Wuqiong Luo, Soraku-gun, JP;
Makoto Taroumaru, Soraku-gun, JP;
Amane Miura, Soraku-gun, JP;
Shigeru Saito, Soraku-gun, JP;
Masazumi Ueba, Soraku-gun, JP;
Takashi Ohira, Soraku-gun, JP;
Masataka Ohira, Soraku-gun, JP;
Wuqiong Luo, Soraku-gun, JP;
Makoto Taroumaru, Soraku-gun, JP;
Amane Miura, Soraku-gun, JP;
Shigeru Saito, Soraku-gun, JP;
Masazumi Ueba, Soraku-gun, JP;
Takashi Ohira, Soraku-gun, JP;
Abstract
A low-profile antenna structure can control its directivity with great flexibility. Excited elementsandare symmetrically arranged on a y-axis, whereas parasitic elementsandare symmetrically arranged on an x-axis, with respect to an origin. The excited elements, as well as the parasitic elements, each have an inverted-F antenna structure and are a distance of λ/4 apart from each other. Feed circuitsandare respectively connected to and feed signals to the excited elementsandsuch that phases of the signals to be fed are different from each other by a desired degree. Variable reactorsand(i) are respectively connected to the parasitic elementsandand (ii) in accordance with reactance values thereof, can each change an electrical length of the corresponding one of the parasitic elements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile