The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2011

Filed:

Apr. 15, 2005
Applicants:

Ching-te K. Chuang, South Salem, NY (US);

Koushik K. Das, Yorktown Heights, NY (US);

Keunwoo Kim, Somers, NY (US);

Inventors:

Ching-Te K. Chuang, South Salem, NY (US);

Koushik K. Das, Yorktown Heights, NY (US);

Keunwoo Kim, Somers, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract

A new power gating structure with robust data retention capability using only one single double-gate device to provide both power gating switch and virtual supply/ground diode clamp functions. The scheme reduces the transistor count, area, and capacitance of the power gating structure, thus improving circuit performance, power, and leakage. The scheme is compared with the conventional power gating structure via mixed-mode physics-based two-dimensional numerical simulations. Analysis of virtual supply/ground bounce for the proposed scheme is also presented.


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