The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Dec. 17, 2008
Takahito Miyazaki, Kyoto, JP;
Shinichiro Uemura, Osaka, JP;
Takahito Miyazaki, Kyoto, JP;
Shinichiro Uemura, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a layered region () formed in a semiconductor substrate () of a first conductivity type, and an electrode pad () formed on the semiconductor substrate with an interlayer insulating film () interposed therebetween and placed above the layered region. The layered region includes a first impurity diffusion region (), a second impurity diffusion region () formed on the first impurity diffusion region, and a third impurity diffusion region () formed on the first impurity diffusion region and surrounding a periphery of the second impurity diffusion region. a conductivity type of the first impurity diffusion region and a conductivity type of the third impurity diffusion region are a second conductivity type, and a conductivity type of the second impurity diffusion region is the first conductivity type. An impurity concentration of the third impurity diffusion region is higher than an impurity concentration of the first impurity diffusion region, and the third impurity diffusion region is electrically connected to a terminal fixed to a constant potential.