The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Feb. 03, 2009
Dong Zheng, San Jose, CA (US);
Phillip J. Benzel, Pleasanton, CA (US);
Joy Jones, Fremont, CA (US);
Alexander Kalnitsky, San Francisco, CA (US);
Perumal Ratnam, Fremont, CA (US);
Dong Zheng, San Jose, CA (US);
Phillip J. Benzel, Pleasanton, CA (US);
Joy Jones, Fremont, CA (US);
Alexander Kalnitsky, San Francisco, CA (US);
Perumal Ratnam, Fremont, CA (US);
Intersil Americas Inc., Milpitas, CA (US);
Abstract
A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.