The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2011

Filed:

Aug. 15, 2008
Applicant:

Fumiaki Toyama, Fukushima-Ken, JP;

Inventor:

Fumiaki Toyama, Fukushima-Ken, JP;

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device and a method for manufacturing thereof are provided. The semiconductor device includes: an ONO film including a charge storage layer on a semiconductor substrate; a plurality of bit lines each extending inside the semiconductor substrate; a plurality of interspaces each interposed between the adjacent bit lines; a plurality of gates each provided along the bit line on the ONO film above the interspaces; and a plurality of word lines electrically coupled with the corresponding gates formed on one of the interspaces, each extending to intersect with the bit lines. The two gates adjacent with each other in a width direction of the bit line are connected to different word lines.


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