The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jun. 22, 2006
Wibo Daniel Van Noort, Wappinger Falls, NY (US);
Jan Sonsky, Leuven, BE;
Philippe Meunier-beillard, Leuven, BE;
Erwin Hijzen, Leuven, BE;
Wibo Daniel Van Noort, Wappinger Falls, NY (US);
Jan Sonsky, Leuven, BE;
Philippe Meunier-Beillard, Leuven, BE;
Erwin Hijzen, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor device () with a substrate () and a semiconductor body () of silicon which comprises an active region (A) with a transistor (T) and a passive region (P) surrounding the active region (A) and which is provided with a buried conducting region () of a metallic material that is connected to a conductive region () of a metallic material sunken from the surface of the semiconductor body (), by which the buried conductive region () is made electrically connectable at the surface of the semiconductor body (). According to the invention, the buried conducting region () is made at the location of the active region (A) of the semiconductor body (). In this way, a very low buried resistance can be locally created in the active region (A) in the semiconductor body (), using a metallic material that has completely different crystallographic properties from the surrounding silicon. This is made possible by using a method according to the invention. Such a buried low resistance offers substantial advantages both for a bipolar transistor and for a MOS transistor.