Semiconductor light-emitting device and its manufacturing method

Abstract

In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting devicecomprises semiconductor layers () of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes () to apply currents into each of the semiconductor layers (), an insulating layerwhich holds the semiconductor layers (), and mount-surface-electrodes (). The semiconductor layers () has a non-deposited areawhere the other semiconductor layer () is not deposited. The insulating layer () has VIAwhich electrically connect the mount-surface-electrodesand the semiconductor-surface-electrodes (). In the manufacturing process, firstly. semiconductor layers () and semiconductor-surface-electrodes () are deposited on the transparent crystal substrate, and by using build-up process, insulating layer () and the mount-surface-electrodes () are formed, and secondly, VIAare formed. and finally, the transparent crystal substrate is separated to get light-emitting device (). Light can be extracted directly and efficiently from the semiconductor layers (). With the mount-surface-electrodes (), light-emitting device () can be mounted by using surface mount technology.