The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Sep. 23, 2010
Jyh Chiarng Wu, Xiamen, CN;
Xuejiao Lin, Xiamen, CN;
Qunfeng Pan, Xiamen, CN;
Meng Hsin Yeh, Xiamen, CN;
Huijun Huang, Xiamen, CN;
Jyh Chiarng Wu, Xiamen, CN;
Xuejiao Lin, Xiamen, CN;
Qunfeng Pan, Xiamen, CN;
Meng Hsin Yeh, Xiamen, CN;
Huijun Huang, Xiamen, CN;
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Abstract
A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.