The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Mar. 19, 2010
Joerg Appenzeller, Valhalla, NY (US);
Phaedon Avouris, Yorktown Heights, NY (US);
Yu-ming Lin, White Plains, NY (US);
Joerg Appenzeller, Valhalla, NY (US);
Phaedon Avouris, Yorktown Heights, NY (US);
Yu-Ming Lin, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.