The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jul. 03, 2008
Shigenari Okada, Tokyo, JP;
Takuya Futase, Tokyo, JP;
Shigenari Okada, Tokyo, JP;
Takuya Futase, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
After gate insulating films, gate electrodes, and ntype semiconductor regions and ptype semiconductor regions for source/drain are formed, a metal film and a barrier film are formed on a semiconductor substrate. And a first heat treatment is performed so as to make the metal film react with the gate electrodes, the ntype semiconductor region, and the ptype semiconductor region, thereby forming a metal silicide layer formed of a monosilicide of a metal element forming the metal film. After that, the barrier film and the unreacted metal film are removed, and then a second heat treatment is performed to stabilize the metal silicide layer. The heat treatment temperature is made lower than a temperature at which a lattice size of a disilicide of the metal element and that of the semiconductor substrate become same.