The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Oct. 02, 2008
Serdar Manakli, Grenoble, FR;
Jessy Bustos, Le Touvet, FR;
Philippe Coronel, Barraux, FR;
Laurent Pain, Saint Nicolas de Macherin, FR;
Serdar Manakli, Grenoble, FR;
Jessy Bustos, Le Touvet, FR;
Philippe Coronel, Barraux, FR;
Laurent Pain, Saint Nicolas de Macherin, FR;
STMicroelectronics SA, Montrouge, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A method is for producing an asymmetric architecture semiconductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.