The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jun. 17, 2009
Soo Young Choi, Fremont, CA (US);
Jriyan Jerry Chen, Santa Clara, CA (US);
Tae Kyung Won, San Jose, CA (US);
Dong-kil Yim, Sungnam, KR;
Soo Young Choi, Fremont, CA (US);
Jriyan Jerry Chen, Santa Clara, CA (US);
Tae Kyung Won, San Jose, CA (US);
Dong-Kil Yim, Sungnam, KR;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.