The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Oct. 13, 2006
Applicants:
Yasutaka Kogetsu, Osaka, JP;
Sumihito Ishida, Osaka, JP;
Inventors:
Yasutaka Kogetsu, Osaka, JP;
Sumihito Ishida, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 15/14 (2006.01); C01B 33/20 (2006.01); C23C 4/04 (2006.01); C23C 8/00 (2006.01); C23C 14/28 (2006.01); C23C 14/10 (2006.01); C23C 16/00 (2006.01); H05H 1/24 (2006.01); H05B 3/00 (2006.01); B65B 33/00 (2006.01); C09D 5/20 (2006.01); B05D 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing a silicon oxide including the steps of supplying silicon atoms onto a substrate through an oxygen atmosphere to form a silicon oxide layer on the substrate, and separating the silicon oxide layer from the substrate and pulverizing the separated silicon oxide layer to obtain silicon oxide containing silicon and oxygen in predetermined proportions, and a negative electrode active material obtained by the production method.