The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Feb. 21, 2008
Hong-sick Park, Suwon-si, KR;
Shi-yul Kim, Yongin-si, KR;
Jong-hyun Choung, Suwon-si, KR;
Won-suk Shin, Yongin-si, KR;
Hong-sick Park, Suwon-si, KR;
Shi-yul Kim, Yongin-si, KR;
Jong-hyun Choung, Suwon-si, KR;
Won-suk Shin, Yongin-si, KR;
Abstract
Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by:M(OH)L  (1)where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates HO, NH, CN, COR, or NHR, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.