The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Jul. 26, 2007
Fritz Kirscht, Berlin, DE;
Vera Abrosimova, Berlin, DE;
Matthias Heuer, Leipzig, DE;
Dieter Linke, Berlin, DE;
Jean Patrice Rakotoniana, Berlin, DE;
Kamel Ounadjela, Belmont, CA (US);
Fritz Kirscht, Berlin, DE;
Vera Abrosimova, Berlin, DE;
Matthias Heuer, Leipzig, DE;
Dieter Linke, Berlin, DE;
Jean Patrice Rakotoniana, Berlin, DE;
Kamel Ounadjela, Belmont, CA (US);
Calisolar, Inc., Sunnyvale, CA (US);
Abstract
Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.