The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2011

Filed:

Dec. 31, 2008
Applicants:

Ming-ta Chin, Hsinchu, TW;

Kuo-feng Huang, Hsinchu, TW;

Ping-fei Shen, Hsinchu, TW;

Ching-jen Wang, Hsinchu, TW;

Shih-pang Chang, Hsinchu, TW;

Inventors:

Ming-Ta Chin, Hsinchu, TW;

Kuo-Feng Huang, Hsinchu, TW;

Ping-Fei Shen, Hsinchu, TW;

Ching-Jen Wang, Hsinchu, TW;

Shih-Pang Chang, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.


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