The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Dec. 14, 2004
Hideo Tanaka, Kobe, JP;
Hideo Tanaka, Kobe, JP;
TPO Hong Kong Holding Limited, Shatin, HK;
Abstract
A source electrode and a drain electrode on a silicon oxide film () each has a double-layered structure of an ITO film (), a transparent electrode, and a metal film () formed on the ITO film (). A gap (), no source electrode and drain electrode region, is formed between the source electrode and the drain electrode. A silicon nitride film () (a gate insulating film) is formed on the source electrode and the drain electrode and in the gap (). The silicon nitride film () is a first region Dhaving a relatively large thickness and a second region Dhaving a relatively small thickness. The region Dof the silicon nitride film () is provided with an MIM structure. A gate bus layer () is formed on the silicon nitride film (). An MIM structure is formed in the second region D.