The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Aug. 26, 2010
Shoji Shukuri, Koganei, JP;
Shoji Shukuri, Koganei, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device having a nonvolatile memory cell which includes a semiconductor substrate, a first insulating film formed over the semiconductor substrate, a control electrode formed over the first insulating film, the first insulating film acting as a gate insulator for the control gate electrode, a second insulating film formed over the semiconductor substrate, and a memory gate electrode formed over the second insulating film and being adjacent to the control gate electrode, the second insulating film acting as a gate insulator for the memory gate electrode and featuring a non-conductive charge trap film, the control gate electrode having a different type conductivity than that of the memory gate electrode. The second insulating film may be a laminated multi-layered insulator featuring a non-conductive charge trap film as an intermediate layer therein which is made of a silicon nitride film.