The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Aug. 21, 2009
Applicants:
Shinjiro Kato, Chiba, JP;
Jun Osanai, Chiba, JP;
Inventors:
Shinjiro Kato, Chiba, JP;
Jun Osanai, Chiba, JP;
Assignee:
Seiko Instruments Inc., Chiba, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a metal oxide semiconductor (MOS) capacitor, in which trenches () are formed in a charge accumulation region () of a p-type silicon substrate () to reduce a contact area between the p-type silicon substrate () and a lightly doped n-type well region (), thereby reducing a leak current from the lightly doped n-type well region () to the p-type silicon substrate ().