The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Feb. 25, 2009
Applicants:
Eiji Oue, Mobara, JP;
Toshio Miyazawa, Chiba, JP;
Inventors:
Eiji Oue, Mobara, JP;
Toshio Miyazawa, Chiba, JP;
Assignee:
Hitachi Displays, Ltd., Chiba, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 31/036 (2006.01); H01L 29/10 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a display device which forms thin film transistors on a substrate, the thin film transistor includes an n-type thin film transistor and a p-type thin film transistor, a gate electrode of one thin film transistor out of the n-type thin film transistor and the p-type thin film transistor forms a metal layer made of a material different from the gate electrode on a gate-insulation-film side thereof, and an LDD layer is formed over a semiconductor layer of at least one of the n-type thin film transistor and the p-type thin film transistor.