The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Dec. 31, 2008
Seon-pil Jang, Seoul, KR;
Jung-han Shin, Yongin-si, KR;
Min-ho Yoon, Seoul, KR;
Seong-sik Shin, Cupertino, CA (US);
Jung-hun Noh, Yongin-si, KR;
Seon-Pil Jang, Seoul, KR;
Jung-Han Shin, Yongin-si, KR;
Min-Ho Yoon, Seoul, KR;
Seong-Sik Shin, Cupertino, CA (US);
Jung-Hun Noh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.