The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Aug. 05, 2006
Hyun Tak Kim, Suwon, KR;
Seong Hwan Park, Cheongju, KR;
Jung Hun Lim, Daejeon, KR;
Sung Bae Kim, Seoul, KR;
Chan Jin Jeong, Kongju, KR;
Kui Jong Baek, Daejeon, KR;
Hyun Tak Kim, Suwon, KR;
Seong Hwan Park, Cheongju, KR;
Jung Hun Lim, Daejeon, KR;
Sung Bae Kim, Seoul, KR;
Chan Jin Jeong, Kongju, KR;
Kui Jong Baek, Daejeon, KR;
Techno Semichem Co., Ltd., Gyeonggi-do, KR;
Abstract
The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.