The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Nov. 29, 2007
Seung Eon Moon, Daejeon, KR;
Eun Kyoung Kim, Daejeon, KR;
Hong Yeol Lee, Chungcheongbuk-do, KR;
Jong Hyurk Park, Daegu, KR;
Kang Ho Park, Daejeon, KR;
Jong Dae Kim, Daejeon, KR;
SO Jeong Park, Gyeonggi-do, KR;
Gyu Tae Kim, Seoul, KR;
Seung Eon Moon, Daejeon, KR;
Eun Kyoung Kim, Daejeon, KR;
Hong Yeol Lee, Chungcheongbuk-do, KR;
Jong Hyurk Park, Daegu, KR;
Kang Ho Park, Daejeon, KR;
Jong Dae Kim, Daejeon, KR;
So Jeong Park, Gyeonggi-do, KR;
Gyu Tae Kim, Seoul, KR;
Abstract
A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process.