The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Sep. 30, 2008
Roger Yu-kwan Leung, San Jose, CA (US);
Anil Bhanap, Milpitas, CA (US);
Zhe Ding, Shanghai, CN;
Nicole Rutherford, Saratoga, CA (US);
Wenya Fan, Campbell, CA (US);
Roger Yu-Kwan Leung, San Jose, CA (US);
Anil Bhanap, Milpitas, CA (US);
Zhe Ding, Shanghai, CN;
Nicole Rutherford, Saratoga, CA (US);
Wenya Fan, Campbell, CA (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.