The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
May. 22, 2008
David M. Schraub, Bastrop, TX (US);
Terry A. Breeden, Cedar Creek, TX (US);
James D. Legg, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Ruiqi Tian, Austin, TX (US);
David M. Schraub, Bastrop, TX (US);
Terry A. Breeden, Cedar Creek, TX (US);
James D. Legg, Austin, TX (US);
Mehul D. Shroff, Austin, TX (US);
Ruiqi Tian, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor process and apparatus to provide a way to reduce plasma-induced damage by applying a patterned layer of photoresist () which includes resist openings formed () over the active circuit areas () as well as additional resist openings () formed over inactive areas () in order to maintain the threshold coverage level to control the amount of resist coverage over a semiconductor structure so that the total amount of resist coverage is at or below a threshold coverage level. Where additional resist openings () are required in order to maintain the threshold coverage level, these openings may be used to create additional charge dissipation structures (e.g.,) for use in manufacturing the final structure.