The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2011

Filed:

Nov. 17, 2010
Applicants:

Jung-dae Park, Ansan-si, KR;

Da-hee Lee, Pyeongtaek-si, KR;

Seung-ki Chae, Seoul, KR;

Pil-kwon Jun, Yongin-si, KR;

Kwang-shin Lim, Yongin-si, KR;

Inventors:

Jung-Dae Park, Ansan-si, KR;

Da-Hee Lee, Pyeongtaek-si, KR;

Seung-Ki Chae, Seoul, KR;

Pil-Kwon Jun, Yongin-si, KR;

Kwang-Shin Lim, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.


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