The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2011

Filed:

Nov. 12, 2007
Applicants:

Tadahiko Sugibayashi, Tokyo, JP;

Takeshi Honda, Tokyo, JP;

Noboru Sakimura, Tokyo, JP;

Nobuyuki Ishiwata, Tokyo, JP;

Shuichi Tahara, Tokyo, JP;

Inventors:

Tadahiko Sugibayashi, Tokyo, JP;

Takeshi Honda, Tokyo, JP;

Noboru Sakimura, Tokyo, JP;

Nobuyuki Ishiwata, Tokyo, JP;

Shuichi Tahara, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 15/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.


Find Patent Forward Citations

Sugibayashi, Tadahiko. (2011). Mram (U.S. Patent No. 7948783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7948783

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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