The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Apr. 04, 2007
Hiroshi Nakatake, Tokyo, JP;
Satoshi Ishibashi, Tokyo, JP;
Shinsuke Idenoue, Tokyo, JP;
Takeshi Oi, Tokyo, JP;
Shinichi Kinouchi, Tokyo, JP;
Takeshi Horiguchi, Tokyo, JP;
Hiroshi Nakatake, Tokyo, JP;
Satoshi Ishibashi, Tokyo, JP;
Shinsuke Idenoue, Tokyo, JP;
Takeshi Oi, Tokyo, JP;
Shinichi Kinouchi, Tokyo, JP;
Takeshi Horiguchi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate 'ON' command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an 'ON' signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off.