The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Dec. 14, 2005
Takao Kuroda, Osaka, JP;
Takao Kuroda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a semiconductor deviceincluding a structure where transfer electrodestoare disposed on a semiconductor substratevia an insulation layer, a first semiconductor regionof a first conductivity type, a second semiconductor regionof a conductivity type opposite to the first conductivity type, and a third semiconductor regionof the first conductivity type in a position that overlaps a region of the semiconductor substratedirectly underneath the transfer electrodesto. The second semiconductor regionis formed on the first semiconductor region. The third semiconductor regionis formed on the second semiconductor regionso that a position of a maximal pointof electric potential of the second semiconductor regionwhen being depleted is deeper than a position of the maximal pointin a case where the third semiconductor regiondoes not exist.