The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Nov. 03, 2009
Scott M. Schnobrich, Cottage Grove, MN (US);
Robert S. Clough, Saint Paul, MN (US);
Dennis E. Vogel, Lake Elmo, MN (US);
Michael E. Griffin, Maplewood, MN (US);
Scott M. Schnobrich, Cottage Grove, MN (US);
Robert S. Clough, Saint Paul, MN (US);
Dennis E. Vogel, Lake Elmo, MN (US);
Michael E. Griffin, Maplewood, MN (US);
3M Innovative Properties Company, Saint Paul, MN (US);
Abstract
The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.