The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Jun. 01, 2009
Applicants:
Zhong Pan, San Jose, CA (US);
David Venables, Sunnyvale, CA (US);
Inventors:
Zhong Pan, San Jose, CA (US);
David Venables, Sunnyvale, CA (US);
Assignee:
JDS Uniphase Corporation, Milpitas, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.