The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
May. 05, 2009
Dae-cheol Kim, Suwon-si, KR;
Woong-kwon Kim, Cheonan-si, KR;
Sang-youn Han, Cheonan-si, KR;
In-woo Kim, Suwon-si, KR;
Ho-jun Lee, Anyang-si, KR;
Byeong-jae Ahn, Suwon-si, KR;
Dae-Cheol Kim, Suwon-si, KR;
Woong-Kwon Kim, Cheonan-si, KR;
Sang-Youn Han, Cheonan-si, KR;
In-Woo Kim, Suwon-si, KR;
Ho-Jun Lee, Anyang-si, KR;
Byeong-Jae Ahn, Suwon-si, KR;
Abstract
A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.