The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Nov. 02, 2006
Applicants:
Delphine Aime, Grenoble, FR;
Benoît Froment, Brussels, BE;
Inventors:
Delphine Aime, Grenoble, FR;
Benoît Froment, Brussels, BE;
Assignee:
STMicroelectronics, SA, Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
An embodiment of a method for forming silicide areas of different thicknesses in a device comprising first and second silicon areas, comprising the steps of: implanting antimony or aluminum in the upper portion of the first silicon areas; covering the silicon areas with a metallic material; and heating the device to transform all or part of the silicon areas into silicide areas, whereby the silicide areas formed at the level of the first silicon areas are thinner than the silicide areas formed at the level of the second silicon areas.