The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Aug. 03, 2007
Toru Nagashima, Shunan, JP;
Kazuya Takada, Shunan, JP;
Hiroyuki Yanagi, Shunan, JP;
Manabu Harada, Shunan, JP;
Yasunori Hirata, Shunan, JP;
Keisuke Kondo, Shunan, JP;
Toru Nagashima, Shunan, JP;
Kazuya Takada, Shunan, JP;
Hiroyuki Yanagi, Shunan, JP;
Manabu Harada, Shunan, JP;
Yasunori Hirata, Shunan, JP;
Keisuke Kondo, Shunan, JP;
Tokuyama Corporation, Shunan-shi, JP;
Abstract
A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other. For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.