The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Mar. 11, 2009
Tomoki Igari, Tokyo, JP;
Mitsuhiko Ogihara, Tokyo, JP;
Hiroyuki Fujiwara, Tokyo, JP;
Hironori Furuta, Tokyo, JP;
Takahito Suzuki, Tokyo, JP;
Tomohiko Sagimori, Tokyo, JP;
Yusuke Nakai, Tokyo, JP;
Tomoki Igari, Tokyo, JP;
Mitsuhiko Ogihara, Tokyo, JP;
Hiroyuki Fujiwara, Tokyo, JP;
Hironori Furuta, Tokyo, JP;
Takahito Suzuki, Tokyo, JP;
Tomohiko Sagimori, Tokyo, JP;
Yusuke Nakai, Tokyo, JP;
Oki Data Corporation, Tokyo, JP;
Abstract
An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.