The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Oct. 31, 2007
Applicant:
Myung-ok Kim, Ichon-shi, KR;
Inventor:
Myung-Ok Kim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a first recess in a substrate, forming a plasma oxide layer over the substrate including first recess, etching the plasma oxide layer to have a portion of the plasma oxide layer remain on sidewalls of the first recess, and forming a second recess by isotropically etching a bottom portion of the first recess, wherein the second recess has a width greater than a width of the first recess.