The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7947430 B1

PDF
Full Text
Expired
Date of Patent:
May. 24, 2011

Filed:

Jan. 04, 2008
Applicants:

Chien-chung Fu, Hsinchu, TW;

Heng-chi Huang, Jhudong Township, Hsinchu County, TW;

Wen-cheng Yang, Chiayi, TW;

Inventors:

Chien-Chung Fu, Hsinchu, TW;

Heng-Chi Huang, Jhudong Township, Hsinchu County, TW;

Wen-Cheng Yang, Chiayi, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming 3D micro structures with high aspect ratios includes the steps of: disposing a mask, which has a plurality of through holes having at least two different sizes, on a substrate to expose the substrate through the through holes; forming a negative photoresist layer on the mask and the substrate; providing a light source to illuminate the negative photoresist layer through the substrate and the through holes of the mask so as to form a plurality of exposed portions and an unexposed portion; and removing the unexposed portion and leaving the exposed portions to form a plurality of pillars each having a bottom portion contacting the substrate and a top portion opposite to the bottom portion. A top area of the top portion is slightly smaller than a bottom area of the bottom portion, and the pillars are allowed to have at least two different heights.


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