The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Mar. 30, 2006
Tsuguo Fududa, Sendai, JP;
Akira Yoshikawa, Sendai, JP;
Hiroki Sato, Sendai, JP;
Fukuda Crystal Laboratory, Miyagi, JP;
Abstract
A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400 DEG C, having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of REGaAlSiO(wherein RE represents a rare earth, and 0<X<5), RETaGaAlO(wherein RE represents a rare earth, and 0<X<5.5) and RENbGaAlO(wherein RE represents a rare earth, and 0<x<5.5) and by exhibiting a 100 to 600° C. resistivity change of ≦10. The process for producing the same is characterized by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas and thereafter cooling the single crystal in an inert gas whose oxidative gas molar fraction (z) is lower than in the above growing step.