Method for realizing an electric linkage in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components

Abstract

A method for realizes electric connections in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components. The method includes: providing a nanometric circuit architecture comprising a succession of conductive nanowires substantially parallel to each other and extended along a direction x; realizing, above the succession, an insulating layer; opening, in the insulating layer, a window of nanometric width b extended along a direction inclined by an angle α with respect to the direction x to substantially cross the whole succession of nanowires, with exposure of a succession of exposed portions of the nanowires, one for each nanowire; realizing, above the insulating layer, a plurality of conductive dies extended along a direction y substantially orthogonal to the direction x and addressed towards the standard electronic components, each of such dies overlapping said window onto a respective exposed portion of a nanowire with obtainment of a plurality of contacts realizing said electric connections.