The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 26, 2010
Yong-kyu Lee, Gwacheon-si, KR;
Jeong-uk Han, Suwon-si, KR;
Hee-seog Jeon, Suwon-si, KR;
Jung-ho Moon, Seoul, KR;
Soung-youb Ha, Gunpo-si, KR;
Yong-Kyu Lee, Gwacheon-si, KR;
Jeong-Uk Han, Suwon-si, KR;
Hee-Seog Jeon, Suwon-si, KR;
Jung-Ho Moon, Seoul, KR;
Soung-Youb Ha, Gunpo-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
In a method of reading data in an EEPROM cell, a bit line voltage for reading is applied to the EEPROM cell including a memory transistor and a selection transistor. A first voltage is applied to a sense line of the memory transistor. A second voltage greater than the first voltage is applied to a word line of the selection transistor. A current passing through the EEPROM cell is compared with a predetermined reference current to read the data stored in the EEPROM cell. An on-cell current of the EEPROM cell may be increased in an erased state and the data in the cell may be readily discriminated.