The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Mar. 09, 2009
Applicants:
Dong-hyuk Chae, Seoul, KR;
Young-ho Lim, Yongin-si, KR;
Inventors:
Dong-Hyuk Chae, Seoul, KR;
Young-Ho Lim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method for programming a flash memory device. The method includes receiving writing data, detecting leakage bit lines of the flash memory device, and updating the received writing data in order for data corresponding to the leakage bit lines to be modified as program-inhibit data. A programming operation is performed on the flash memory device after updating the writing data.
Chae, Dong-Hyuk. (2011). Flash memory device and method for programming flash memory device having leakage bit lines (U.S. Patent No. 7944747). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7944747
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile