The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Aug. 24, 2010
Xuguang Wang, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Xuguang Wang, Eden Prairie, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Dimitar V. Dimitrov, Edina, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.